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2N7002K -- N-Channel Enhancement Mode Field Effect Transistor
March 2010
2N7002K
N-Channel Enhancement Mode Field Effect Transistor
Features
* * * * * * * * Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Pb Free/RoHS Compliant ESD HBM=2000V (Typical:3000V) as per JESD22 A114 and ESD CDM=2000V as per JESD22 C101
D
S G
SOT-23
Marking : 7K
Absolute Maximum Ratings *
Symbol
VDSS VDGR VGSS ID TJ TSTG Drain-Source Voltage
TA = 25C unless otherwise noted
Parameter
Drain-Gate Voltage RGS 1.0M Gate-Source Voltage Drain Current Continuous Pulsed
Value
60 60 20 300 800 -55 to +150 -55 to +150
Units
V V V mA C C
Operating Junction Temperature Range Storage Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
Thermal Characteristics
Symbol
PD RJA
Parameter
Total Device Dissipation Derating above TA = 25C Thermal Resistance, Junction to Ambient *
Value
350 2.8 350
Units
mW mW/C C/W
* Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size
(c) 2010 Fairchild Semiconductor Corporation 2N7002K Rev. A2 1
www.fairchildsemi.com
2N7002K -- N-Channel Enhancement Mode Field Effect Transistor
Electrical Characteristics
Symbol
BVDSS IDSS IGSS VGS(th)
TA = 25C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage
Test Condition
VGS= 0V, ID=10uA VDS= 60V, VGS= 0V VDS= 60V, VGS= 0V, @TC = 125C VGS= 20V, VDS= 0V VDS = VGS, ID = 250uA
MIN
60
MAX
Units
V
Off Characteristics (Note1)
1.0 500 10 A A
On Characteristics (Note1)
Gate Threshold Voltage 1.0 2.5 2 4 1.5 1.2 200 V A mS RDS(ON) Satic Drain-Source On-Resistance VGS = 10V, ID = 0.5A VGS = 4.5V, ID = 200mA ID(ON) gFS Ciss Coss Crss tD(ON) tD(OFF) On-State Drain Current Forward Transconductance VGS = 10V, VDS= 7.5V VGS = 4.5V, VDS= 10V VDS = 10V, ID = 0.2A
Dynamic Characteristics
Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, VGS= 0V, f = 1.0MHz 50 15 6 pF pF pF
Switching Characteristics
Turn-On Delay Time Turn-Off Delay Time VDD = 30V, IDSS = 200mA, RG = 10, VGS= 10V 5 30 ns
Note1 : Short duration test pulse used to minimize self-heating effect.
(c) 2010 Fairchild Semiconductor Corporation 2N7002K Rev. A2 2
www.fairchildsemi.com
2N7002K -- N-Channel Enhancement Mode Field Effect Transistor
Typical Performance Characteristics
Figure 1. On-Region Characteristics
2.0
Figure 2. On-Resistance Variation with Gate Voltage and Drain Current
3.0
ID. DRAIN-SOURCE CURRENT(A)
VGS = 10V
1.5
RDS(on), () DRANI-SOURCE ON-RESISTANCE
VGS = 3V
2.5
4V 4.5V 5V
5V
4V
1.0
2.0
7V
6V
1.5
3V
0.5
1.0
10V 9V 8V
2V
0.0 0 2 4 6 8 10
0.5 0.0
0.2
0.4
0.6
0.8
1.0
VDS. DRAIN-SOURCE VOLTAGE (V)
ID. DRAIN-SOURCE CURRENT(A)
Figure 3. On-Resistance Variation with Temperature
3.0
Figure 4. On-Resistance Variation with Gate-Source Voltage
RDS(on) () DRANI-SOURCE ON-RESISTANCE
VDS = 10V ID = 500 mA
2.5
2.0
1.5
1.0
0.5 -50
0
50
100
o
150
TJ. JUNCTION TEMPERATURE( C)
Figure 5. Transfer Characteristics
1.0
Figure 6. Gate Threshold Variation with Temperature
Vth, Gate-Source Threshold Voltage (V)
2.0
ID. DRAIN-SOURCE CURRENT(A)
VDS = 10V
0.8
o
25( C)
o
VDS = VGS
1.8
TJ = -25( C)
0.6
o
ID = 1 mA
1.6
150( C)
o
ID = 0.25 mA
1.4
125( C)
0.4
75( C)
0.2
o
1.2
0.0 2 3 4 5 6
1.0 -50
0
50
100
o
150
VGS. GATE-SOURCE VOLTAGE (V)
TJ. JUNCTION TEMPERATURE( C)
(c) 2010 Fairchild Semiconductor Corporation 2N7002K Rev. A2 3
www.fairchildsemi.com
2N7002K -- N-Channel Enhancement Mode Field Effect Transistor
Typical Performance Characteristics (Continue)
Figure 7. Reverse Drain Current Variation with Diode Forward Voltage and Temperature
VGS = 0 V
IS Reverse Drain Current, [mA]
100
TA=150 C
10
o
25 C
o
-55 C
o
1 0.0
0.2
0.4
0.6
0.8
1.0
VSD, Body Diode Forward Voltage [V]
(c) 2010 Fairchild Semiconductor Corporation 2N7002K Rev. A2 4
www.fairchildsemi.com
2N7002K -- N-Channel Enhancement Mode Field Effect Transistor
Physical Dimensions
SOT-23
Dimensions in Millimeters
(c) 2010 Fairchild Semiconductor Corporation 2N7002K Rev. A2 5
www.fairchildsemi.com
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Rev. I47
(c) Fairchild Semiconductor Corporation
www.fairchildsemi.com

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